File No.. 848 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
[ID(J8LJD
Solid State Division
Power Tr...
File No.. 848 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
[ID(J8LJD
Solid State Division
Power
Transistors 2N6510-2N6514
High-Voltage, High-Current Silicon N-P-N Power-Switching
Transistors
For Switching Applications in Industrial Commercial and Military Equipment
JEDEC TO-3
H-1570
Features:
a Fast switching speed 1:::1 Epitaxial pi-nu construction " Hermetic steel package-JEDEC TO-3 a Maximum.safe-area-of-operation curves a Thermal-cycling rating chart
The RCA-2N6510. -2N6511, -2N6512, -2N6513, and -2N6514° are epitaxial silicon n-p-n power
transistors with pi-nu construction. They are especially designed for use in electronic ignition circuits and other applications requiring high-voltage, high-energy, and fast-switching-speed capability.
These devices are hermetically sealed in a steel JEDEC TO-3 package. They differ from each other in breakdown-voltage ratings, leakage, and beta characteristics.
°Formerly RCA Dev. Nos. TA8847D. TA8847A, TA8847B, TA884...