_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 302
DDJ]3LJD
Solid State Division
Power Transis...
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 302
DDJ]3LJD
Solid State Division
Power
Transistors
40537 40538
3J
40537L 40538L JEDEC TOoS
H·13BO
40537S 40538S JEDEC TO-39
H·t381
Silicon P-N-P
Transistors
For Driver and Output Stages in Audio-Amplifier Circuits
Features:
Planar construction provides low-noise and low·leakage
characteristics
Gain bandwidth product (fT) = 50 MHz min.
40538 is p·n·p complement of 40539' rTh-_-d-'-Yic-"-,-,,-,,,-j-'.-b-',-w-i-Ih-'-i-lh-er-.-,%-...,
Low saturation voltage: VCE(sat) = -1.1 V max. (40537) = -2.0 V max. (40538)
High pulse beta at high collector current: hFE = 50 min. at IC = -50 mA (40537)
inch I.ads CTO'& package) or )S:·inch Iuds (TO-39 package). Thelonllr-lud versions are specified bV suffix "L" aftar the type number: the shorta,-Iead versions are specified by suffix "'S" aftar the type number.
= 15 min. at IC = -500 mA (40538)
RCA·40537 and 40538 are double·diffused. epitax...
