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BC858A Dataheets PDF



Part Number BC858A
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description SMALL SIGNAL PNP TRANSISTORS
Datasheet BC858A DatasheetBC858A Datasheet (PDF)

BC857 BC858 SMALL SIGNAL PNP TRANSISTORS Type BC857A BC857B BC858A BC858B Marking 3E 3F 3J 3K s SILICON EPITAXIAL PLANAR PNP TRANSISTORS s MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS s VERY LOW NOISE AF AMPLIFIER s NPN COMPLEMENTS FOR BC857 IS BC847 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS S ym b o l Parameter VCES V CBO V CEO V EBO IC ICM IBM IEM Ptot Tstg Tj Collector-Emit ter Voltage (VBE = 0) Collector-Base Voltage (IE = 0) Collec.

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BC857 BC858 SMALL SIGNAL PNP TRANSISTORS Type BC857A BC857B BC858A BC858B Marking 3E 3F 3J 3K s SILICON EPITAXIAL PLANAR PNP TRANSISTORS s MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS s VERY LOW NOISE AF AMPLIFIER s NPN COMPLEMENTS FOR BC857 IS BC847 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS S ym b o l Parameter VCES V CBO V CEO V EBO IC ICM IBM IEM Ptot Tstg Tj Collector-Emit ter Voltage (VBE = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Peak Current Emitter Peak Current Total Dissipation at Tc = 25 oC Storage Temperature Max. O perating Junction Temperature October 1997 Value BC857 BC858 -50 -30 -50 -30 -45 -30 -5 -0.1 -0.2 -0.2 -0.2 300 -65 to 150 150 Uni t V V V V A A A A mW oC oC 1/5 BC857/BC858 THERMAL DATA Rthj-amb • Thermal Resistance Junction-Ambient Rth j-SR • Thermal Resistance Junction-Substrat e • Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm Max Max 420 330 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol P a ram et er Test Conditions ICBO Collector Cut-off Current (IE = 0) VCE = -30 V VCE = -30 V Ta mb = 150 oC V(BR)CES ∗ Collect or-Emitter Breakdown Voltage (VBE = 0) IC = -10 µA for BC857 for BC858 V( BR)CBO ∗ Collect or-Base Breakdown Voltage (IE = 0) IC = -10 µA for BC857 for BC858 V( BR)CEO ∗ Collect or-Emitter Breakdown Voltage (IB = 0) V(BR)EBO Em it t er -Base Breakdown Voltage (IC = 0) VCE(sat)∗ Collect or-Emitter Saturation Voltage IC = -2 mA for BC857 for BC858 IC = -10 µA for BC857 for BC858 IC = -10 mA IC = -100 mA IB = -0.5 mA IB = -5 mA VBE(s at)∗ Base-Emitt er Saturation Voltage IC = -10 mA IB = -0.5 mA IC = -100 mA IB = -5 mA VBE(on)∗ Base-Emitt er O n Voltage IC = -2 mA VCE = -5 V IC = -10 mA VCE = -5 V hFE DC Current G ain IC = -10 µA for group A for group B IC = -2 mA for group A for group B VCE = -5 V VCE = -5 V fT Transit ion F requency IC = -10 mA VCE = -5 V f = 100MHz CCB Collect or Base Capacitance IE = 0 VCB = -10 V f = 1 MHz NF Noise Figure VCE = -5 V IC = -0.2 mA f = 1KHz ∆f = 200 Hz RG = 2 KΩ ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % Min. -50 -30 -50 -30 -45 -30 -6 -5 -0.6 110 200 Typ . -0.09 -0.25 -0.75 -0.9 -0.66 -0.72 90 150 180 290 150 2 1.2 M a x. -15 -5 -0.3 -0.65 -0.75 -0.82 220 450 6 10 4 Unit nA µA V V V V V V V V V V V V V V MHz pF dB dB 2/5 BC857/BC858 ELECTRICAL CHARACTERISTICS (Continued) Symb ol P a ram et er Test Conditions hie Input Impedance VCE = -5 V IC = -2 mA for group A for group B f = 1KHz hre Reverse Voltage Ratio VCE = -5 V IC = -2 mA f = 1KHz for group A for group B hfe Small Signal Current VCE = -5 V IC = -2 mA f = 1KHz Gain for group A for group B hoe Output Admittance VCE = -5 V IC = -2 mA for group A for group B ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % f = 1KHz Min. Typ . Max. Un it 1.6 2.7 4.5 KΩ 3.2 4.5 8.5 KΩ 1.5 10-4 2 10-4 220 330 18 30 µs 30 60 µs 3/5 BC857/BC858 DIM. A B C D E F G H L M N O MIN. 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 SOT-23 MECHANICAL DATA mm TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 0044616/B 4/5 BC857/BC858 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 5/5 .


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