Document
BC857 BC858
SMALL SIGNAL PNP TRANSISTORS
Type BC857A BC857B BC858A BC858B
Marking 3E 3F 3J 3K
s SILICON EPITAXIAL PLANAR PNP TRANSISTORS
s MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS
s VERY LOW NOISE AF AMPLIFIER s NPN COMPLEMENTS FOR BC857 IS BC847
2
3 1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l
Parameter
VCES V CBO V CEO V EBO
IC ICM IBM IEM Ptot Tstg Tj
Collector-Emit ter Voltage (VBE = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Peak Current Emitter Peak Current Total Dissipation at Tc = 25 oC Storage Temperature Max. O perating Junction Temperature
October 1997
Value
BC857
BC858
-50 -30
-50 -30
-45 -30
-5
-0.1
-0.2
-0.2
-0.2
300
-65 to 150
150
Uni t
V V V V A A A A mW oC oC
1/5
BC857/BC858
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient Rth j-SR • Thermal Resistance Junction-Substrat e
• Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm
Max Max
420 330
oC/W oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off Current (IE = 0)
VCE = -30 V VCE = -30 V Ta mb = 150 oC
V(BR)CES ∗ Collect or-Emitter Breakdown Voltage (VBE = 0)
IC = -10 µA for BC857 for BC858
V( BR)CBO ∗ Collect or-Base Breakdown Voltage
(IE = 0)
IC = -10 µA for BC857
for BC858
V( BR)CEO ∗ Collect or-Emitter Breakdown Voltage (IB = 0)
V(BR)EBO
Em it t er -Base Breakdown Voltage (IC = 0)
VCE(sat)∗ Collect or-Emitter Saturation Voltage
IC = -2 mA for BC857 for BC858
IC = -10 µA for BC857 for BC858
IC = -10 mA IC = -100 mA
IB = -0.5 mA IB = -5 mA
VBE(s at)∗ Base-Emitt er Saturation Voltage
IC = -10 mA IB = -0.5 mA IC = -100 mA IB = -5 mA
VBE(on)∗ Base-Emitt er O n Voltage
IC = -2 mA VCE = -5 V IC = -10 mA VCE = -5 V
hFE DC Current G ain
IC = -10 µA for group A for group B IC = -2 mA for group A
for group B
VCE = -5 V VCE = -5 V
fT Transit ion F requency IC = -10 mA VCE = -5 V f = 100MHz
CCB Collect or Base Capacitance
IE = 0 VCB = -10 V f = 1 MHz
NF Noise Figure
VCE = -5 V IC = -0.2 mA f = 1KHz
∆f = 200 Hz RG = 2 KΩ
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
Min.
-50 -30 -50 -30 -45 -30 -6 -5
-0.6
110 200
Typ .
-0.09 -0.25 -0.75 -0.9 -0.66 -0.72
90 150 180 290 150
2 1.2
M a x. -15 -5
-0.3 -0.65
-0.75 -0.82
220 450
6 10 4
Unit nA µA
V V
V V
V V
V V V V V V V V
MHz pF
dB dB
2/5
BC857/BC858
ELECTRICAL CHARACTERISTICS (Continued)
Symb ol
P a ram et er
Test Conditions
hie Input Impedance
VCE = -5 V IC = -2 mA for group A for group B
f = 1KHz
hre Reverse Voltage Ratio VCE = -5 V IC = -2 mA f = 1KHz for group A for group B
hfe Small Signal Current VCE = -5 V IC = -2 mA f = 1KHz
Gain
for group A
for group B
hoe Output Admittance
VCE = -5 V IC = -2 mA for group A for group B
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
f = 1KHz
Min. Typ . Max. Un it
1.6 2.7 4.5 KΩ 3.2 4.5 8.5 KΩ
1.5 10-4 2 10-4
220 330
18 30 µs 30 60 µs
3/5
BC857/BC858
DIM.
A B C D E F G H L M N O
MIN. 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3
0 0.3 0.09
SOT-23 MECHANICAL DATA
mm TYP.
MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17
MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8
0 11.8 3.5
mils TYP.
MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7
0044616/B
4/5
BC857/BC858
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES
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5/5
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