DTM4606BD

DTM4606BD www.din-tek.jp N- and P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () N-Channel 30 0.018 at VGS = 10 V 0.024 at VGS = 4.5 V P-Channel - 30 0.036 at VGS = - 10 V 0.040 at VGS = - 4.5 V ID (A)a 7.0 5.2 - 6.9 - 5.4 Qg (Typ.) 2.75 4.1 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC SO-8 S1 1 8 D1 P-Channel G1 2 7 D1 S2 3 G2 4 6 N-Channel 5 D2 D2 Top View S1 G1 D2 G2 D1 P-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage VGS ± 20 TC = 25 °C 7.0 - 6.9 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 4.9 5.9b, c - 4.4 - 5.4b, c TA = 70 °C 3.9b, c - 3.7b, c Pulsed Drain Current (10 µs Pulse Width) IDM 21 - 21 Source-Drain Current Diod...