DTP11N60SJ

DTP11N60SJ/DTP11N60FSJ/DTU11N60SJ/DTL11N60SJ www.din-tek.jp N-Channel 600V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 600 RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) VGS = 10 V 38 4 4.2 Configuration Single 0.38 TO-220AB TO-220 FULLPAK FEATURES Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting Industrial TO-252 TO-251 D G GD S Top View GDS Top View GDS Top View GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a Linear...