Document
DTP11N60SJ/DTP11N60FSJ/DTU11N60SJ/DTL11N60SJ
www.din-tek.jp
N-Channel 600V (D-S) Super Junction Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
600
RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC)
VGS = 10 V 38 4
4.2
Configuration
Single
0.38
TO-220AB
TO-220 FULLPAK
FEATURES
• Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS)
APPLICATIONS
• Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting
- High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial
TO-252
TO-251
D
G
GD S Top View
GDS Top View
GDS Top View
GDS Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current a Linear.