DTP11N80SJ

DTN11N80SJ/DTP11N80SJ/DTP11N80FSJ www.din-tek.jp N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 800 RDS(on) max. at 25 °C (Ω) Qg max. (nC) VGS = 10 V 73 Qgs (nC) Qgd (nC) 9 17 Configuration Single 0.50 TO-220AB TO-220 FULLPAK FEATURES Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting TO-247AC D GD S Top View GDS Top View S D G Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS I...