Document
DTN20N80SJ/DTP20N80SJ/DTP20N80FSJ
www.din-tek.jp
N-Channel 800V (D-S) Super Junction Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
800
RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC)
VGS = 10 V 140 21
37
Configuration
Single
0.24
TO-220AB
TO-220 FULLPAK
FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS)
APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting
- High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial
Available Available
TO-247AC
D
GD S Top View
GDS Top View
S D G
Top View
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a
VGS at 10 V
TC = 25 °C TC = 100.