Document
DTP2N60SJ/DTP2N60FSJ/DTU2N60SJ/DTL2N60SJ
ZZZGLQWHNMS
/$IBOOFM607 %4
4VQFS+VODUJPOPower MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)
600 VGS = 10 V
Qg (Max.) (nC) Qgs (nC) Qgd (nC)
31 4.6 17
Configuration
Single
2.3
FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220AB
TO-220 FULLPAK
TO-252
TO-251
D
GD S Top View
GDS Top View
GDS Top View
GDS Top View
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C TC = 100 °C
ID IDM
Linear Derating Factor
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya
EAS IAR EAR
Maximum Power Dissipation Peak Diode Reco.