DTP5N65FSJ

DTP5N65SJ/DTP5N65FSJ/DTU5N65SJ/DTL5N65SJ www.din-tek.jp /$IBOOFM
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Power MOSFET PRODUCT SUMMARY VDS (V) 650 RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) VGS = 10 V 15 3 6 Configuration Single 0.95 FEATURES Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT Fully Characterized Capacitance and Avalanche Voltage and Current Compliant to RoHS directive 2002/95/EC TO-220AB TO-220 FULLPAK TO-252 TO-251 D GD S Top View GDS Top View GDS Top View GDS Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 10 V...