MSS30-050-P86

MSS30-xxx-x Series Low Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode. Rev. V1 Chip Electrical Specifications: TA = 25°C Model Configuration MSS30-046-C15 Single Junction VF Typ. V 0.29 MSS30-050-C15 Single Junction 0.27 Test Conditions IF = 1 mA VBR Min. V 2 CJ Typ. / Max. pF 0.10 / 0.12 2 0.15 / 0.18 IR = 10 µA VR = 0 V F = 1 MHz RS Typ. Ω 10 6 RD Max. Ω 18 15 I = 5 mA FCO Typ. GHz 160 175 Outline C15 C15 Beam Lead Electrical Specifications: TA = 25°C Model Configuration MSS30-142-B10B Single Junction VF Typ. V 0.29 VBR Min. V 2 CJ Typ. / Max. pF 0.07 / 0.10 MSS30-...