MSS39-xxx-x Series
P-Type Silicon Schottky Diodes
Features
Very Low 1/f Noise Detector Applications up to 40 GHz C...
MSS39-xxx-x Series
P-Type Silicon
Schottky Diodes
Features
Very Low 1/f Noise Detector Applications up to 40 GHz Chip Beam Lead and Packaged Devices
Description
The MSS39-xxx-x Series of
Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetector applications up to 40 GHz.
Rev. V1
Chip
Electrical Specifications: TA = 25°C
Model
VBR Min.
V
VF Typ.
V
MSS39-045-C15
5
0.40
CJ Max. pF
0.10
TSS Ttp. dBm
-58
ϓ Typ. mV / mW
5,000
Frequency Max. GHz
18
MSS39-048-C15
5
0.39 0.15
-58
5,000
12
Test Conditions
IR = 10 µA
IF = 1 mA
VR = 0 V, DC Bias = 10 mA, F = 10 GHz F = 1 MHz RL = 100 KΩ Video BW = 2 MHz
Outline
C15 C15
Beam Lead
Electrical Specifications: TA = 25°C
Model
VBR Min.
V
VF Typ.
V
MSS39-144-B10B
3.5
0.38
CJ Max. pF
0.08
TSS Ttp. dBm
-58
ϓ Typ. mV / mW
5,000
Frequency Max. GHz
40
MSS39-146-B10B
3.5
0.38 0.10
-58
5,000
26
MSS39-148-B10B
3.5
0.39 0.12
-58
5,000...