BC858B

Transistors BC858BW / BC858B PNP General Purpose Transistor BC858BW / BC858B zFeatures 1) BVCEO < -30V (IC=-1mA) 2) Complements the BC848B / BC848BW. zPackage, marking and packaging specifications Paet No. Pakaging type Marking Code Basic ordering unit (pieces) BC858BW UMT3 G3K T106 3000 BC858B SST3 G3K T116 3000 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Collector power dissipation PC Junction temperature Tj Storage temperature Tstg ∗ When mounted on 7 × 5 × 0.6 mm ceramic board. Limits −30 −30 −5 −0.1 0.2 0.35 150 −65 to +150 Unit V V V A W∗ ˚C ˚C zExternal dimensions (Unit : mm) BC858BW SOT-323 ROHM : UMT3 EIAJ : EC-70 2.0±0.2 1.3±0.1 0.65 0.65 (1) (2) 0.9±0.1 0.2 0.7±0.1 1.2±0.1 2.1±0.1 0.1~0.4 00.1 (3) 0.3+- 00.1 0.15±0.05 All terminals have same dimensions (1) Emitter (2) Base (3) Collector BC858B SOT-23 ROHM : SST3 2.9±0.2 1.9±0.2 0.95 0.95 0.95 +0.2 −0.1 0.45±0.1 (1) (2) (3) 1.3-+00..21 2.4±0.2 0~0.1 0.2Min. 0.4+−00..015 0.15−+00..016 All terminals have same dimensions (1) Emitter (2) Base (3) Collector zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol BVCBO BVCEO BVEBO Collector cutoff current ICBO Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition...