MSS40-xxx-x Series
Medium Barrier Silicon Schottky Diodes
Features
VF, RD and CJ Matching Options Chip, Beam Lead an...
MSS40-xxx-x Series
Medium Barrier Silicon
Schottky Diodes
Features
VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MSS40-xxx-x Series of
Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode.
Rev. V1
Chip
Electrical Specifications: TA = 25°C
Model
Configuration
MSS40-045-C15 Single Junction
VF Typ.
V
0.42
MSS40-048-C15 Single Junction 0.40
Test Conditions
IF = 1 mA
VBR Min.
V
3
CJ Typ. / Max.
pF
0.09 / 0.12
3 0.12 / 0.15
IR = 10 µA
VR = 0 V F = 1 MHz
RS Typ.
Ω 7
7
RD Max.
Ω 15
15
I = 5 mA
FCO Typ. GHz 253
190
Outline
C15 C15
Beam Lead Electrical Specifications: TA = 25°C
Model
Configuration
MSS40-141-B10B Single Junction
VF Typ.
V
0.42
VBR Min.
V
3
CJ Typ. / Max.
pF
0.06 / 0.10
MSS40-...