MSS40-148-E25

MSS40-xxx-x Series Medium Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS40-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode. Rev. V1 Chip Electrical Specifications: TA = 25°C Model Configuration MSS40-045-C15 Single Junction VF Typ. V 0.42 MSS40-048-C15 Single Junction 0.40 Test Conditions IF = 1 mA VBR Min. V 3 CJ Typ. / Max. pF 0.09 / 0.12 3 0.12 / 0.15 IR = 10 µA VR = 0 V F = 1 MHz RS Typ. Ω 7 7 RD Max. Ω 15 15 I = 5 mA FCO Typ. GHz 253 190 Outline C15 C15 Beam Lead Electrical Specifications: TA = 25°C Model Configuration MSS40-141-B10B Single Junction VF Typ. V 0.42 VBR Min. V 3 CJ Typ. / Max. pF 0.06 / 0.10 MSS40-...