MSS50-xxx-x Series
High Barrier Silicon Schottky Diodes
Features
VF, RD and CJ Matching Options Chip, Beam Lead and ...
MSS50-xxx-x Series
High Barrier Silicon
Schottky Diodes
Features
VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MSS50-xxx-x Series of
Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +2 dBm to +8 dBm per diode.
Rev. V1
Chip
Electrical Specifications: TA = 25°C
Model
Configuration
VF Typ.
V
MSS50-048-C15 Single Junction
0.5
VBR Min.
V
4
CJ Typ. / Max.
pF
0.12 / 0.15
MSS50-062-C16 Test Conditions
Single Junction
0.5 IF = 1 mA
5 0.50 / 0.55
IR = 10 µA
VR = 0 V F = 1 MHz
RS Typ.
Ω
7
RD Max.
Ω
15
2 12
I = 5 mA
FCO Typ. GHz 190
160
Outline C15 C16
Beam Lead
Electrical Specifications: TA = 25°C
Model
Configuration
VF Typ.
V
MSS50-146-B10B Single Junction 0.52
VBR Min.
V
5
CJ Typ. / Max.
pF
0.07 / 0.12
MSS50-...