256-Mbit Double Data Rate SDRAM
HYB25D256[400/800/160]B[T/C](L) 256-Mbit Double Data Rate SDRAM, Die Rev. B
Data Sheet Jan. 2003, V1.1
Features
CAS La...
Description
HYB25D256[400/800/160]B[T/C](L) 256-Mbit Double Data Rate SDRAM, Die Rev. B
Data Sheet Jan. 2003, V1.1
Features
CAS Latency and Frequency
CAS Latency
2 2.5
Maximum Operating Frequency (MHz) DDR200 DDR266A DDR266 DDR333
-8 -7 -7F -6 100 133 133 133 125 143 143 166
Double data rate architecture: two data transfers per clock cycle
Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver
DQS is edge-aligned with data for reads and is center-aligned with data for writes
Differential clock inputs (CK and CK)
Four internal banks for concurrent operation
Data mask (DM) for write data
DLL aligns DQ and DQS transitions with CK transitions
Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
Burst Lengths: 2, 4, or 8
CAS Latency: (1.5), 2, 2.5, (3)
Auto Precharge option for each burst access
Auto Refresh and Self Refresh Modes
7.8ms Maximum ...
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