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HYB25D256400BC

Infineon

256-Mbit Double Data Rate SDRAM

HYB25D256[400/800/160]B[T/C](L) 256-Mbit Double Data Rate SDRAM, Die Rev. B Data Sheet Jan. 2003, V1.1 Features CAS La...


Infineon

HYB25D256400BC

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HYB25D256[400/800/160]B[T/C](L) 256-Mbit Double Data Rate SDRAM, Die Rev. B Data Sheet Jan. 2003, V1.1 Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency (MHz) DDR200 DDR266A DDR266 DDR333 -8 -7 -7F -6 100 133 133 133 125 143 143 166 Double data rate architecture: two data transfers per clock cycle Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver DQS is edge-aligned with data for reads and is center-aligned with data for writes Differential clock inputs (CK and CK) Four internal banks for concurrent operation Data mask (DM) for write data DLL aligns DQ and DQS transitions with CK transitions Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS Burst Lengths: 2, 4, or 8 CAS Latency: (1.5), 2, 2.5, (3) Auto Precharge option for each burst access Auto Refresh and Self Refresh Modes 7.8ms Maximum ...




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