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Planar Back (Tunnel) Diodes MBD Series
Description
The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized for detector operation and offered in five nominal values with varying degrees of sensitivity and video impedance. The back detector is generally operated with zero bias and is known for its exellent temperature stability and fast video rise times.
Features
• Zero bias operation • Exellent temperature stability • Low Video Impedance • Screening per MIL-PRF-19500
and MIL-PRF-35834 available.
Absolute Maximum Ratings
Parameters
Input Power Operating Temperature Storage Temperature Soldering Temperature
Chip Packaged
Rating
+14 dBm CW or Pulsed in a tuned detector -65 °C to +110 °C -65 °C to +125 °C
See chip assembly instructions on page 8 +230 °C for 5 seconds (must be hand soldered)
Chip
Elect.