DatasheetsPDF.com

P4N20

STMicroelectronics

N-channel Power MOSFET

® STP4N20 N - CHANNEL 200V - 1.3 Ω - 4A TO-220 POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4N20 200 V < 1.5 Ω 4A...


STMicroelectronics

P4N20

File Download Download P4N20 Datasheet


Description
® STP4N20 N - CHANNEL 200V - 1.3 Ω - 4A TO-220 POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4N20 200 V < 1.5 Ω 4A s TYPICAL RDS(on) = 1.3 Ω s AVALANCHE RUGGED TECHNOLOGY )s 100% AVALANCHE TESTED t(ss LOW GATE CHARGE s HIGH CURRENT CAPABILITY cs 150 oC OPERATING TEMPERATURE dus APPLICATION ORIENTED roCHARACTERIZATION PAPPLICATIONS tes HIGH CURRENT, HIGH SPEED SWITCHING les SOLENOID AND RELAY DRIVERS os DC-DC CONVERTERS & DC-AC INVERTERS ss TELECOMMUNICATION POWER SUPPLIES Obs INDUSTRIAL MOTOR DRIVERS 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM olete Product(s) -ABSOLUTE MAXIMUM RATINGS ObsSymbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain- gate Voltage (RGS = 20 kΩ) 200 V VGS Gate-source Voltage ID Drain Current (continuous) at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC ± 20 4 2.5 V A A IDM() Ptot Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor 16 60 0.48 A W W/oC Tstg Storage Temperatur...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)