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BC858C Dataheets PDF



Part Number BC858C
Manufacturers Diotec Semiconductor
Logo Diotec Semiconductor
Description SMD General Purpose PNP Transistors
Datasheet BC858C DatasheetBC858C Datasheet (PDF)

BC856 ... BC860 BC856 ... BC860 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2015-05-12 2.9 ±0.1 0.4+0.1 -0.05 3 Type Code 2.4 ±0.2 1.3±0.1 1.1+0.1 -0.2 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. 12 1.9±0.1 Dimensions - Maße [mm] 1=B 2=E 3=C Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging tape.

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BC856 ... BC860 BC856 ... BC860 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2015-05-12 2.9 ±0.1 0.4+0.1 -0.05 3 Type Code 2.4 ±0.2 1.3±0.1 1.1+0.1 -0.2 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. 12 1.9±0.1 Dimensions - Maße [mm] 1=B 2=E 3=C Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle PNP 250 mW SOT-23 (TO-236) 0.01 g Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCEO - VCBO - VEBO Ptot - IC - ICM Tj TS Grenzwerte (TA = 25°C) BC856 BC857 BC860 BC858 BC859 65 V 45 V 30 V 80 V 50 V 30 V 5V 250 mW 1) 100 mA 200 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 5 V, - IC = 10 µA Group A Group B Group C HFE hFE hFE - VCE = 5 V, - IC = 2 mA Group A Group B Group C HFE hFE hFE Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA - VCEsat - VCEsat Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA - VBEsat - VBEsat Kennwerte (Tj = 25°C) Min. Typ. Max. – 90 – – 150 – – 270 – 125 180 250 220 290 475 420 520 800 – – 300 mV – – 650 mV – 700 mV – – 900 mV – 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 BC856 ... BC860 Characteristics (Tj = 25°C) Base-Emitter-voltage – Basis-Emitter-Spannung 2) - VCE = 5 V, IC = - 2 mA - VCE = 5 V, IC = - 10 mA - VBE - VBE Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCE = 30 V, Tj = 125°C, (E open) - ICBO - ICBO Emitter-Base cutoff current - VEB = 5 V, (C open) Gain-Bandwidth Product – Transitfrequenz - IEBO - VCE = 5 V, - IC = 10 mA, f = 100 MHz fT Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz CCBO Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEB0 Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 µA RG = 2 kΩ, f = 1 kHz, Δf = 200 Hz BC856 ... BC858 BC859 ... BC860 Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft F F RthA Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking of available current gain groups Stempelung der lieferbaren Stromverstärkungsgruppen BC856A = 3A BC856B = 3B BC856C = 3C Kennwerte (Tj = 25°C) Min. Typ. Max. 600 mV – 750 mV – – 720 mV – – 15 nA – – 4 µA – – 100 nA 100 MHz – – – – 4.5 pF – 9 pF – – 2 dB 10 dB – 1.2 dB 4 dB < 420 K/W 1) BC846 ... BC850 BC857A = 3E BC857B = 3F BC857C = 3G BC858A = 3E BC858B = 3F BC858C = 3G BC860B = 3F BC860C = 3G or 4G BC859B = 3F BC859C = 3G or 4C 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG .


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