Document
BC856 ... BC860
BC856 ... BC860
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Version 2015-05-12
2.9 ±0.1
0.4+0.1 -0.05
3
Type Code
2.4 ±0.2 1.3±0.1
1.1+0.1 -0.2
Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca.
12
1.9±0.1 Dimensions - Maße [mm] 1=B 2=E 3=C
Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
PNP
250 mW SOT-23 (TO-236) 0.01 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur
B open E open C open
- VCEO - VCBO - VEBO
Ptot - IC - ICM Tj TS
Grenzwerte (TA = 25°C)
BC856
BC857 BC860
BC858 BC859
65 V
45 V
30 V
80 V
50 V
30 V
5V
250 mW 1)
100 mA
200 mA
-55...+150°C -55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 5 V, - IC = 10 µA
Group A Group B Group C
HFE hFE hFE
- VCE = 5 V, - IC = 2 mA
Group A Group B Group C
HFE hFE hFE
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA
- VCEsat - VCEsat
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA
- VBEsat - VBEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
– 90 – – 150 – – 270 – 125 180 250 220 290 475 420 520 800
– – 300 mV – – 650 mV
– 700 mV – – 900 mV –
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
BC856 ... BC860
Characteristics (Tj = 25°C)
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- VCE = 5 V, IC = - 2 mA - VCE = 5 V, IC = - 10 mA
- VBE - VBE
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 30 V, (E open) - VCE = 30 V, Tj = 125°C, (E open)
- ICBO - ICBO
Emitter-Base cutoff current
- VEB = 5 V, (C open) Gain-Bandwidth Product – Transitfrequenz
- IEBO
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
CCBO
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEB0
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA RG = 2 kΩ, f = 1 kHz, Δf = 200 Hz
BC856 ... BC858 BC859 ... BC860
Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft
F F RthA
Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren
Marking of available current gain groups Stempelung der lieferbaren Stromverstärkungsgruppen
BC856A = 3A BC856B = 3B BC856C = 3C
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
600 mV – 750 mV – – 720 mV
– – 15 nA – – 4 µA
– – 100 nA
100 MHz
–
–
– – 4.5 pF
– 9 pF –
– 2 dB 10 dB
–
1.2 dB
4 dB
< 420 K/W 1)
BC846 ... BC850
BC857A = 3E BC857B = 3F BC857C = 3G
BC858A = 3E BC858B = 3F BC858C = 3G
BC860B = 3F BC860C = 3G or 4G
BC859B = 3F BC859C = 3G or 4C
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG
.