MGS905

MGS8xx / MGS9xx Series GaAs Schottky Diodes Features  14 Different Configurations  Beam Lead, Flip Chip, or Packaged Devices  Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MGS series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. Rev. V1 Beam Lead Electrical Characteristics, TA = +25°C Model Configuration MGS901 Single Junction MGS902 Anti-parallel Pair MGS903 Series Tee MGS904 4 Junction Ring-Quad MGS905 4 Junction Bridge-Quad MGS906 4 Junction Series-Tee MGS907 8 Junction Ring-Quad MGS907A 8 Junction Ring-Quad MGS907B 8 Junction Ring-Quad MGS908 8 Junction Quad MGS909 6 Junction Series-Tee MGS910 12 Junction Ring-Quad MGS911 12 Junction Bridge-Quad MGS912 Four Junction Test Conditions VF mV Min. 650 650 650 650 650 1300 1300 1300 1300 1300 1800 1800 1800 2500 Max. 750 750 750 750 750 1500 1500 1500 1500 1500 2100 2100 2100 2900 IF = 1 mA Δ VF mV Max. — 20 20 20 20...