MGS8xx / MGS9xx Series
GaAs Schottky Diodes
Features
14 Different Configurations Beam Lead, Flip Chip, or Packaged ...
MGS8xx / MGS9xx Series
GaAs
Schottky Diodes
Features
14 Different Configurations Beam Lead, Flip Chip, or Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MGS series of GaAs
Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz.
Rev. V1
Beam Lead Electrical Characteristics, TA = +25°C
Model
Configuration
MGS901 Single Junction MGS902 Anti-parallel Pair MGS903 Series Tee MGS904 4 Junction Ring-Quad MGS905 4 Junction Bridge-Quad MGS906 4 Junction Series-Tee MGS907 8 Junction Ring-Quad MGS907A 8 Junction Ring-Quad MGS907B 8 Junction Ring-Quad MGS908 8 Junction Quad MGS909 6 Junction Series-Tee MGS910 12 Junction Ring-Quad MGS911 12 Junction Bridge-Quad MGS912 Four Junction
Test Conditions
VF mV
Min.
650 650 650 650 650 1300 1300 1300 1300 1300 1800 1800 1800 2500
Max.
750 750 750 750 750 1500 1500 1500 1500 1500 2100 2100 2100 2900 IF = 1 mA
Δ VF mV
Max.
— 20 20 20 20...