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RKR0503AKH Dataheets PDF



Part Number RKR0503AKH
Manufacturers Renesas
Logo Renesas
Description Silicon Schottky Barrier Diode
Datasheet RKR0503AKH DatasheetRKR0503AKH Datasheet (PDF)

RKR0503AKH Silicon Schottky Barrier Diode for Rectifying REJ03G1740-0100 Rev.1.00 Nov 17, 2008 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Thin Ultra small Resin Package (TURP) is suitable for compact and high-density surface mount design. Ordering Information Part No. RKR0503AKH Laser Mark S8 Package Name TURP Package Code PUSF0002ZC-A Pin Arrangement Cathode mark Mark 1 S8 2 1. Cathode 2. Anode REJ03G1740-0100 Rev.1.00 Nov 17, 2008 Page 1 of 5 .

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RKR0503AKH Silicon Schottky Barrier Diode for Rectifying REJ03G1740-0100 Rev.1.00 Nov 17, 2008 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Thin Ultra small Resin Package (TURP) is suitable for compact and high-density surface mount design. Ordering Information Part No. RKR0503AKH Laser Mark S8 Package Name TURP Package Code PUSF0002ZC-A Pin Arrangement Cathode mark Mark 1 S8 2 1. Cathode 2. Anode REJ03G1740-0100 Rev.1.00 Nov 17, 2008 Page 1 of 5 RKR0503AKH Absolute Maximum Ratings Item Symbol Value Repetitive peak reverse voltage Reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature VRRM VR IO *1 *2 IFSM *3 Tj 30 30 0.5 3 125 Storage temperature Tstg –55 to +125 Notes: 1. See from Fig.6 with Glass epoxy board. 2. Ta = 62°C, With Glass epoxy board (board size: 50 mm × 50 mm, Land size 6 mm × 6 mm) Short form wave (θ180°C), VR = 10 V. 3. 10 ms sine wave 1 pulse. (Ta.


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