MPN7380

High Power Silicon PIN Diodes Silicon PIN Diode Chips Features  Voltage Breakdown up to 800 V  Passivated Mesa Construction  Screening Available per MIL-PRF-19500 / 38534 Description These silicon PIN diodes feature fully passivated mesa designs with tri-metalization for reliable operation under the most demanding conditions. Rev. V1 Electrical Specifications: TA = +25°C (unless otherwise specified) Part # MPN7330 Breakdown Voltage VB IR = 10 µA V Min. 300 Series Resistance RS IF = 100 mA (100 MHz) Ω Max. 0.5 Junction Capacitance CJ VR = 50 V Minority Carrier Lifetime IF = 10 mA IR = 6 mA 50% recovery pF ns Max. Min. 0.40 500 Theta °C/W Max. 10 I-Region Width Contact Diameter Chip Size µm mils Mils (sq.) Nominal 30 10 15 MPN7360 600 0.4 1.00 2500 7 70 20 37 MPN7370 700 0.3 2.30 5000 5 70 40 64 MPN7380 800 0.5 0.60 2500 7 80 24 37 MPN7420 400 1.5 0.08 1000 30 100 5 15 MPN7453A 300 1.0 0.15 700 20 60 8 15 MPN7453B 400 0.9 0.20 250...