High Power Silicon PIN Diodes
High Power Silicon PIN Diodes
Silicon PIN Diode Chips
Features
Voltage Breakdown up to 800 V Passivated Mesa Constru...
Description
High Power Silicon PIN Diodes
Silicon PIN Diode Chips
Features
Voltage Breakdown up to 800 V Passivated Mesa Construction Screening Available per MIL-PRF-19500 / 38534
Description
These silicon PIN diodes feature fully passivated mesa designs with tri-metalization for reliable operation under the most demanding conditions.
Rev. V1
Electrical Specifications: TA = +25°C (unless otherwise specified)
Part # MPN7330
Breakdown Voltage VB
IR = 10 µA
V Min.
300
Series Resistance
RS IF = 100 mA (100 MHz)
Ω Max.
0.5
Junction Capacitance
CJ VR = 50 V
Minority Carrier Lifetime IF = 10 mA IR = 6 mA 50% recovery
pF ns
Max.
Min.
0.40 500
Theta
°C/W Max.
10
I-Region Width
Contact Diameter
Chip Size
µm mils Mils (sq.) Nominal
30 10 15
MPN7360
600
0.4
1.00 2500 7 70 20 37
MPN7370
700
0.3
2.30 5000 5 70 40 64
MPN7380
800
0.5
0.60 2500 7 80 24 37
MPN7420
400
1.5
0.08
1000
30 100
5
15
MPN7453A
300
1.0
0.15 700 20 60 8 15
MPN7453B
400
0.9
0.20 250...
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