MURS360B

MURS360B Ultrafast power diode Rev.03 - 30 December 2019 Product data sheet 1. General description Ultrafast power diode in a SMB surface-mountable plastic package. 2. Features and benefits Low on-state loss Low leakage current Low thermal resistance Surface-mountable package Reduces switching losses in associated MOSFET or IGBT 3. Applications Buck and Boost converter Discontinuous Current Mode (DCM) Power Factor Correction (PFC) Inverter freewheeling and protection diode 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM IF(AV) IFRM IFSM repetitive peak reverse voltage average forward current repetitive peak forward current non-repetitive peak forward current δ = 0.5 ; square-wave pulse; Tlead ≤ 105 °C; Fig. 1; Fig. 2; Fig. 3 δ = 0.5 ; tp = 25 μs; Tlead ≤ 105 °C; square-wave pulse tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; Symbol Parameter Conditions Static characteristics VF forward voltage Dynamic characteristics IF = 3 A; Tj = 25 °C; Fig. 6 IF = 3 A; Tj = 150 °C; Fig. 6 trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs; Tj = 25 °C; Fig. 7 Values Unit 600 V 3 A 6 A 100 A 110 Min Typ A Max Unit - - 1.3 V - 0.88 1.05 V - 50 - ns WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode 2 A anode MURS360B Ultrafast power diode Si...