NXPLQSC10650

NXPLQSC10650 Silicon Carbide Diode Rev.02 - 07 November 2019 1. General description Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency switched-mode power supplies. RoHS Product data sheet halogen-Free 2. Features and benefits Super low capacitance and recovery charge Highly stable switching performance High forward surge capability IFSM Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant 3. Applications Power factor correction Telecom / Server SMPS UPS PV inverter PC Silverbox LED / OLED TV Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 87 °C; Fig. 1; Fig. 2; Fig. 3 Tj junction temperature Symbol Parameter Conditions Static characteristics VF forward voltage Dynamic characteristics IF = 10 A; Tj = 25 °C; Fig. 5 IF = 10 A; Tj = 150 °C; Fig. 5 Qr recovered charge IF = 10 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; Fig. 7 Values Unit 650 V 10 A 175 Min Typ °C Max Unit - 1.65 1.85 V - 2.1 2.5 V - 12 - nC WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode 2 A mb mb anode mounting base; connected to cat...