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NXPSC04650B

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Silicon Carbide Diode

NXPSC04650B Silicon Carbide Diode 4 January 2017 Product data sheet 1. General description Silicon Carbide Schottky di...


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NXPSC04650B

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Description
NXPSC04650B Silicon Carbide Diode 4 January 2017 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO263 (D2PAK) plastic package, designed for high frequency switched-mode power supplies. 2. Features and benefits Highly stable switching performance High forward surge capability IFSM Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant 3. Applications Power factor correction Telecom/Server SMPS UPS PV inverter PC Silverbox LED/OLED TV Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; Tmb ≤ 136 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3; Fig. 4 Tj junction temperature Static characteristics VF forward voltage Dynamic characteristic...




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