NXPSC04650B
Silicon Carbide Diode
4 January 2017
Product data sheet
1. General description
Silicon Carbide Schottky di...
NXPSC04650B
Silicon Carbide Diode
4 January 2017
Product data sheet
1. General description
Silicon Carbide
Schottky diode in a TO263 (D2PAK) plastic package, designed for high frequency switched-mode power supplies.
2. Features and benefits
Highly stable switching performance High forward surge capability IFSM Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant
3. Applications
Power factor correction Telecom/Server SMPS UPS PV inverter PC Silverbox LED/OLED TV Motor Drives
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse voltage
IF(AV)
average forward current
δ = 0.5 ; Tmb ≤ 136 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3; Fig. 4
Tj junction temperature Static characteristics
VF forward voltage Dynamic characteristic...