NXPSC04650X

NXPSC04650X Silicon Carbide Diode Rev.02 - 07 November 2019 1. General description Silicon Carbide Schottky diode in a TO220F2L plastic package, designed for high frequency switched-mode power supplies. Product data sheet h RoHS alogen-Free 2. Features and benefits Highly stable switching performance High forward surge capability IFSM Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant Insulated package rated at 2500V RMS 3. Applications Power factor correction Telecom / Server SMPS UPS PV inverter PC Silverbox LED / OLED TV Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; square-wave pulse; Th ≤ 104 °C; Fig. 1; Fig. 2; Fig. 3 Symbol Parameter Conditions Static characteristics VF forward voltage IF = 4 A; Tj = 25 °C; Fig. 5 IF = 4 A; Tj = 150 °C; Fig. 5 Values Unit 650 V 4 A Min Typ Max Unit - 1.5 1.7 V - 1.8 2.1 V WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode 2 A mb n.c. anode mounting base; isolated Simplified outline NXPSC04650X Silicon Carbide Diode Graphic symbol K A 001aaa020 12 6. Ordering information Table 3. Ordering information Type number Package n...