NXPSC20650W

NXPSC20650W Silicon Carbide Diode 22 November 2016 Product data sheet 1. General description Dual Silicon Carbide Schottky diode in a 3-lead TO-247 plastic package, designed for high frequency switched-mode power supplies. 2. Features and benefits Highly stable switching performance High forward surge capability IFSM Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant 3. Applications Power factor correction Telecom / Server SMPS UPS PV inverter Electrical Vehicle Charger Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IO(AV) limiting average output Tmb ≤ 105 °C; δfactor = 0.5 ; square- current wave pulse; both diodes conducting; Fig. 1; Fig. 2; Fig. 3; Fig. 4 Tj junction temperature Static character...