Document
BT158W-1200T
SCR
Rev.02 - 05 September 2019
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier in a TO247 (SOT429) plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance.
2. Features and benefits
• High thermal cycling performance • Planar passivated for voltage ruggedness and reliability • High voltage capacity • Very high current surge capability
3. Applications
• Line rectifying 50/60 Hz • Softstart AC motor control • DC Motor control • Power converter • AC power control • Lighting and temperature control • Uninterruptible Power Supply (UPS) • Solid State Relay (SSR) • Traction battery charging
4. Quick reference data
Table 1. Quick reference data Symbol Parameter
Absolute maximum rating
VRRM
repetitive peak reverse voltage
IT(AV)
average on-state current
IT(RMS)
RMS on-state current
ITSM
non-repetitive peak on-
state current
Tj
junction temperature
Conditions
half sine wave; Tmb ≤ 117 °C half sine wave; Tmb ≤ 117 °C; Fig. 1; Fig. 2; Fig. 3 half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms
Min Typ Max Unit
-
-
1200 V
-
-
80 A
-
-
126 A
-
-
1100 A
-
-
1210 A
-
-
150 °C
WeEn Semiconductors
BT158W-1200T
SCR
Symbol Parameter
Static characteristics
IGT
gate trigger current
Dynamic characteristics
dVD/dt
rate of rise of off-state voltage
Conditions
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7; Fig. 8
VDM = 804 V; Tj = 125 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform VDM = 804 V; Tj = 150 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
cathode
Simplified outline
2
A
anode
3
G
mb
A
gate
mounting base; connected to anode
Min Typ Max Unit
-
-
70
mA
1500 -
-
V/μs
1000 -
-
V/μs
Graphic symbol
A
K
G sym037
123
6. Ordering information
Table 3. Ordering information
Type number
Package Orderable part number
Name
BT158W-1200T TO247 BT158W-1200TQ
Packing method
Tube
Small packing quantity
30
Package version
TO247N
Package issue date
20-July-2016
BT158W-1200T
Product data sheet
All information provided in this document is subject to legal disclaimers.
05 September 2019
© WeEn Semiconductors Co., Ltd. 2019. All rights reserved
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WeEn Semiconductors
BT158W-1200T
SCR
7. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
repetitive peak off-state voltage
VRRM
repetitive peak reverse voltage
IT(AV)
average on-state current half sine wave; Tmb ≤ 117 °C
IT(RMS)
RMS on-state current
half sine wave; Tmb ≤ 117 °C; Fig 1; Fig 2; Fig 3
ITSM
non-repetitive peak on-
half sine wave; Tj(init) = 25 °C; tp = 10 ms;
state current
Fig 4; Fig 5
I2t
I2t for fusing
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms.