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BT158W-1200T Dataheets PDF



Part Number BT158W-1200T
Manufacturers WeEn
Logo WeEn
Description SCR
Datasheet BT158W-1200T DatasheetBT158W-1200T Datasheet (PDF)

BT158W-1200T SCR Rev.02 - 05 September 2019 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier in a TO247 (SOT429) plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance. 2. Features and benefits • High thermal cycling performance • Planar passivated for voltage ruggedness and reliability • High voltage capacity • Very high current surge capability 3. Applications • Line rectify.

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BT158W-1200T SCR Rev.02 - 05 September 2019 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier in a TO247 (SOT429) plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance. 2. Features and benefits • High thermal cycling performance • Planar passivated for voltage ruggedness and reliability • High voltage capacity • Very high current surge capability 3. Applications • Line rectifying 50/60 Hz • Softstart AC motor control • DC Motor control • Power converter • AC power control • Lighting and temperature control • Uninterruptible Power Supply (UPS) • Solid State Relay (SSR) • Traction battery charging 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VRRM repetitive peak reverse voltage IT(AV) average on-state current IT(RMS) RMS on-state current ITSM non-repetitive peak on- state current Tj junction temperature Conditions half sine wave; Tmb ≤ 117 °C half sine wave; Tmb ≤ 117 °C; Fig. 1; Fig. 2; Fig. 3 half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Min Typ Max Unit - - 1200 V - - 80 A - - 126 A - - 1100 A - - 1210 A - - 150 °C WeEn Semiconductors BT158W-1200T SCR Symbol Parameter Static characteristics IGT gate trigger current Dynamic characteristics dVD/dt rate of rise of off-state voltage Conditions VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7; Fig. 8 VDM = 804 V; Tj = 125 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform VDM = 804 V; Tj = 150 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode Simplified outline 2 A anode 3 G mb A gate mounting base; connected to anode Min Typ Max Unit - - 70 mA 1500 - - V/μs 1000 - - V/μs Graphic symbol A K G sym037 123 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Name BT158W-1200T TO247 BT158W-1200TQ Packing method Tube Small packing quantity 30 Package version TO247N Package issue date 20-July-2016 BT158W-1200T Product data sheet All information provided in this document is subject to legal disclaimers. 05 September 2019 © WeEn Semiconductors Co., Ltd. 2019. All rights reserved 2 / 13 WeEn Semiconductors BT158W-1200T SCR 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage VRRM repetitive peak reverse voltage IT(AV) average on-state current half sine wave; Tmb ≤ 117 °C IT(RMS) RMS on-state current half sine wave; Tmb ≤ 117 °C; Fig 1; Fig 2; Fig 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; tp = 10 ms; state current Fig 4; Fig 5 I2t I2t for fusing half sine wave; Tj(init) = 25 °C; tp = 8.3 ms.


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