SCR
TYN16B-600CT
SCR
Rev.02 - 10 May 2019
Product data sheet
1. General description
Planar passivated Silicon Controlled R...
Description
TYN16B-600CT
SCR
Rev.02 - 10 May 2019
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier (SCR) in a TO263 (D2PAK) plastic package intended for use in applications requiring high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C).
2. Features and benefits
High junction operating temperature capability High thermal cycling performance High voltage capability Planar passivated for voltage ruggedness and reliability High bidirectional blocking voltage capability Surface mountable package Very high current surge capability
3. Applications
Ignition circuits Motor control Protection circuits e.g. SMPS inrush current Voltage regulation Crowbar protection
4. Quick reference data
Table 1. Quick reference data Symbol Parameter
Conditions
VDRM
repetitive peak off-state voltage
VRRM
repetitive peak reverse voltage
ITSM
non-repetitive peak on- half sine wave; Tj(init) = 25 °C; tp = 10 ms;
state current
Fig 4; Fig 5
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms
Tj
junction temperature
IT(AV)
average on-state
half sine wave;Tmb ≤ 133 °C;
current
Fig 1
IT(RMS)
RMS on-state current
half sine wave;Tmb ≤ 133 °C; Fig 2; Fig 3
Values 600
600
180
198 150 10.2
16
Unit V
V
A
A °C A
A
WeEn Semiconductors
TYN16B-600CT
SCR
Symbol Parameter
Static characteristics
IGT
gate trigger current
Dynamic characteristics
dVD/dt
rate of rise of off-state voltage
Conditions
VD = 12 ...
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