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EC103D1W

NXP

SCR

SOT223 EC103D1W SCR 23 July 2014 Product data sheet 1. General description Planar passivated ultra sensitive gate Sil...


NXP

EC103D1W

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Description
SOT223 EC103D1W SCR 23 July 2014 Product data sheet 1. General description Planar passivated ultra sensitive gate Silicon Controlled Rectifier in a SOT223 surface mountable plastic package. 2. Features and benefits Planar passivated for voltage ruggedness and reliability Ultra sensitive gate Surface mountable package 3. Applications Electronic ballasts Safety shut down and protection circuits Sensing circuits Smoke detectors Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage VRRM repetitive peak reverse voltage ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 Tj junction temperature IT(RMS) RMS on-state current half sine wave; Tsp ≤ 114 °C; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 9 Min Typ Max Unit - - 400 V - - ...




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