2N2369A

2N2369A SILICON NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2369A is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCES VCEO VEBO IC ICM PD PD TJ, Tstg ΘJA ΘJC 40 40 15 4.5 200 500 360 1.2 -65 to +200 486 146 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=20V ICBO VCB=20V, TA=150°C BVCBO IC=10μA 40 BVCES IC=10μA 40 BVCEO IC=10mA 15 BVEBO IE=10μA 4.5 VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=10mA, IB=1.0mA, TA=125°C VCE(SAT) IC=30mA, IB=3.0mA VCE(SAT) ...