DatasheetsPDF.com

Z0109MA Dataheets PDF



Part Number Z0109MA
Manufacturers WeEn
Logo WeEn
Description 4Q Triac
Datasheet Z0109MA DatasheetZ0109MA Datasheet (PDF)

Z0109MA 4Q Triac 17 September 2018 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT54 (TO-92) plastic package intended for use in applications requiring direct interfacing to logic ICs and low power gate drivers. 2. Features and benefits • Direct interfacing to logic level ICs • Direct interfacing to low power gate drive circuits • High blocking voltage capability • Planar passivated for voltage ruggedness and reliability • Sensitive gate.

  Z0109MA   Z0109MA


Document
Z0109MA 4Q Triac 17 September 2018 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT54 (TO-92) plastic package intended for use in applications requiring direct interfacing to logic ICs and low power gate drivers. 2. Features and benefits • Direct interfacing to logic level ICs • Direct interfacing to low power gate drive circuits • High blocking voltage capability • Planar passivated for voltage ruggedness and reliability • Sensitive gate in four quadrants • Triggering in all four quadrants 3. Applications • General purpose low power motor control • Home appliances • Industrial process control • Low power AC Fan controllers 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current full sine wave; Tlead ≤ 45 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 Min Typ Max Unit - - 600 V - - 1A - - 8A - - 8.5 A - - 125 °C - - 10 mA - - 10 mA - - 10 mA WeEn Semiconductors Z0109MA 4Q Triac Symbol Parameter IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dVcom/dt rate of change of commutating voltage Conditions VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 VD = 12 V; Tj = 25 °C; Fig. 9 IT = 1 A; Tj = 25 °C; Fig. 10 VDM = 402 V; Tj = 110 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit; Fig. 12 VD = 400 V; Tj = 110 °C; dIcom/ dt = 0.44 A/ms; IT = 1 A; gate open circuit Min Typ Max Unit - - 10 mA - - 10 mA - 1.3 1.6 V 50 - - V/µs 2 - - V/µs 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 T2 main terminal 2 2 G gate 3 T1 main terminal 1 Simplified outline 321 TO-92 (SOT54) Graphic symbol T2 sym051 T1 G 6. Ordering information Table 3. Ordering information Type number Package Name Z0109MA TO-92 Description plastic single-ended leaded (through hole) package; 3 leads Version SOT54 Z0109MA Product data sheet All information provided in this document is subject to legal disclaimers. 17 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 13 WeEn Semiconductors Z0109MA 4Q Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tlead ≤ 45 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms; state current Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms I2t I2t for fusing tp = 10 ms; SIN dIT/dt rate of rise of on-state current IG = 20 mA; T2+ G+ IG = 20 mA; T2+ G- IG = 20 mA; T2- G- IG = 20 mA; T2- G+ IGM peak gate current PGM peak gate power PG(AV) average gate power over any 20 ms period Tstg storage temperature Tj junction temperature 1 .2 IT(RMS ) (A) 0 .8 003aac264 16 IT(RMS) (A) 12 8 0 .4 4 Min Max Unit - 600 V - 1A - 8A - 8.5 A - 0.32 A²s - 50 A/µs - 50 A/µs - 50 A/µs - 20 A/µs - 1A - 2W - 0.1 W -40 150 °C - 125 °C 003a a f977 0 -50 0 50 100 150 Tle a d (°C ) Fig. 1. RMS on-state current as a function of lead temperature; maximum values 0 10-2 10-1 1 10 surge duration (s) f = 50 Hz; Tlead = 45 °C Fig. 2. RMS on-state current as a function of surge duration; maximum values Z0109MA Product data sheet All information provided in this document is subject to legal disclaimers. 17 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 13 WeEn Semiconductors Z0109MA 4Q Triac 2 .0 Ptot (W) 1 .6 1 .2 conduction angle, α (degrees) 30 60 90 120 180 form factor a 2.816 1.967 1.570 1.329 1.110 0 .8 0 .4 α α 003aac259 α = 180° 120° 9 0° 6 0° 30° 0 .0 0 0.2 0.4 0.6 0.8 1 α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 10 ITSM (A) 8 1 .2 IT(RMS ) (A) 003aad318 6 4 IT ITSM 2t 1/f Tj(init) = 25 °C max 0 1 10 102 103 number of cycles f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values Z0109MA Product data sheet All information provided in this document is subject to legal disclaimers. 17 September 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 / 13 WeEn Semiconductors 103 ITS M (A) 102 10 (1) (2) Z0109MA 4Q Triac 003a a d319 IT ITSM t tp Tj(init) = 25 °C max 110-5 10-4 10-3 10-2 tp ≤ 20.


Z0109MA0 Z0109MA Z0107NA0


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)