Document
Z0109MA
4Q Triac
17 September 2018
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT54 (TO-92) plastic package intended for use in applications requiring direct interfacing to logic ICs and low power gate drivers.
2. Features and benefits
• Direct interfacing to logic level ICs • Direct interfacing to low power gate drive circuits • High blocking voltage capability • Planar passivated for voltage ruggedness and reliability • Sensitive gate in four quadrants • Triggering in all four quadrants
3. Applications
• General purpose low power motor control • Home appliances • Industrial process control • Low power AC Fan controllers
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak offstate voltage
IT(RMS)
RMS on-state current full sine wave; Tlead ≤ 45 °C; Fig. 1; Fig. 2; Fig. 3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
Tj junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7
Min Typ Max Unit - - 600 V - - 1A - - 8A - - 8.5 A - - 125 °C
- - 10 mA - - 10 mA - - 10 mA
WeEn Semiconductors
Z0109MA
4Q Triac
Symbol
Parameter
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state voltage
dVcom/dt
rate of change of commutating voltage
Conditions
VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 1 A; Tj = 25 °C; Fig. 10
VDM = 402 V; Tj = 110 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit; Fig. 12
VD = 400 V; Tj = 110 °C; dIcom/ dt = 0.44 A/ms; IT = 1 A; gate open circuit
Min Typ Max Unit - - 10 mA - - 10 mA - 1.3 1.6 V
50 - - V/µs
2 - - V/µs
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 T2 main terminal 2 2 G gate 3 T1 main terminal 1
Simplified outline
321
TO-92 (SOT54)
Graphic symbol
T2 sym051
T1 G
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Z0109MA
TO-92
Description plastic single-ended leaded (through hole) package; 3 leads
Version SOT54
Z0109MA
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
2 / 13
WeEn Semiconductors
Z0109MA
4Q Triac
7. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tlead ≤ 45 °C; Fig. 1; Fig. 2; Fig. 3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;
state current
Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
I2t
I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current
IG = 20 mA; T2+ G+ IG = 20 mA; T2+ G-
IG = 20 mA; T2- G-
IG = 20 mA; T2- G+
IGM peak gate current
PGM peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg storage temperature
Tj junction temperature
1 .2 IT(RMS )
(A)
0 .8
003aac264
16 IT(RMS)
(A)
12
8
0 .4 4
Min Max Unit - 600 V
- 1A
- 8A
- 8.5 A - 0.32 A²s - 50 A/µs - 50 A/µs - 50 A/µs - 20 A/µs - 1A - 2W - 0.1 W -40 150 °C - 125 °C
003a a f977
0 -50 0 50 100 150
Tle a d (°C )
Fig. 1. RMS on-state current as a function of lead temperature; maximum values
0 10-2
10-1
1 10 surge duration (s)
f = 50 Hz; Tlead = 45 °C
Fig. 2. RMS on-state current as a function of surge duration; maximum values
Z0109MA
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
3 / 13
WeEn Semiconductors
Z0109MA
4Q Triac
2 .0 Ptot (W)
1 .6
1 .2
conduction angle, α
(degrees)
30 60 90 120 180
form factor
a
2.816 1.967 1.570 1.329 1.110
0 .8
0 .4
α α
003aac259
α = 180° 120° 9 0° 6 0° 30°
0 .0 0
0.2 0.4 0.6 0.8
1
α = conduction angle a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
10 ITSM (A)
8
1 .2 IT(RMS ) (A)
003aad318
6
4 IT ITSM
2t
1/f
Tj(init) = 25 °C max
0 1
10 102 103
number of cycles
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values
Z0109MA
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
4 / 13
WeEn Semiconductors
103 ITS M (A)
102
10
(1) (2)
Z0109MA
4Q Triac
003a a d319
IT ITSM t
tp
Tj(init) = 25 °C max
110-5
10-4
10-3
10-2
tp ≤ 20.