BC856 ... BC860
BC856 ... BC860
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltr...
BC856 ... BC860
BC856 ... BC860
PNP
Surface Mount General Purpose Si-Epi-Planar
Transistors Si-Epi-Planar Universal
transistoren für die Oberflächenmontage
Version 2015-05-12
2.9 ±0.1
0.4+0.1 -0.05
3
Type Code
2.4 ±0.2 1.3±0.1
1.1+0.1 -0.2
Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca.
12
1.9±0.1 Dimensions - Maße [mm] 1=B 2=E 3=C
Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
PNP
250 mW SOT-23 (TO-236) 0.01 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur
B open E open C open
- VCEO - VCBO - VEBO
Ptot - IC - ICM Tj TS
Grenzwerte (TA = 25°C)
BC856
BC857 BC860
BC858 BC859
65 V
45 V
30 V
80 V
50 V
30 V
5V
250 mW 1)
100 mA
200 mA
-55...+150°C -55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 5 V, - IC = 10 µA
Group A Group B Group C
HFE hFE hFE
- VCE = 5 V, - IC = 2 mA
Group A Group B Group C
HFE hFE hFE
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA IC...