Document
BTA316B-600B0
3Q Hi-Com Triac
Rev.02 - 30 July 2021
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a TO263 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B0" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber.
2. Features and benefits
• 3Q technology for improved noise immunity • High immunity to false turn-on by dV/dt • High minimum IGT for guaranteed immunity to gate noise • High voltage capability • Surface mountable package • Least sensitive gate for highest noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only • Very high commutation capability with maximum false trigger immunity
3. Applications
• Electronic thermostats (heating and cooling) • High power motor controls e.g. washing machines and vacuum cleaners • Rectifier-fed DC inductive loads e.g. DC motors and solenoids • Refrigeration and air conditioning compressors
4. Quick reference data
Table 1. Quick reference data Symbol Parameter
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
ITSM
non-repetitive peak on-
state current
Tj
junction temperature
Symbol Parameter
Static characteristics
Conditions
full sine wave; Tmb ≤ 101 °C; Fig. 1; Fig. 2; Fig. 3 full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
Conditions
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7
Min Typ Max Unit
-
-
600 V
-
-
16
A
-
-
140 A
-
-
150 A
-
-
125 °C
Min Typ Max Unit
10
-
10
-
10
-
50
mA
50
mA
50
mA
WeEn Semiconductors
BTA316-600B0
3Q Hi-Com Triac
IH
holding current
VT
on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state voltage
dIcom/dt
rate of change of commutating current
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 18 A; Tj = 25 °C; Fig. 10
VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM ); exponential waveform; gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/μs; (snubberless condition); gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A; dVcom/dt = 10 V/μs; (snubberless condition); gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A; dVcom/dt = 1 V/μs; (snubberless condition); gate open circuit
-
-
60
mA
-
1.3 1.5 V
2500 -
-
V/μs
20
-
-
A/ms
30
-
-
A/ms
50
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
T1
main terminal 1
2
T2
main terminal 2
3
G
mb
T2
gate mounting base; main terminal 2
2
1
3
E
TO-263 (D2PAK)
N
Graphic symbol
T2
T1
G sym051
6. Ordering information
Table 3. Ordering information
Type number
Package Orderable part number Name
BTA316B-600B0 TO263 BTA316B-600B0J
Packing method
Reel
Small packing Package
quantity
version
800
TO263E (E)
TO263N (N)
Package issue date 26-May-2017
26-Sep-2016
7. Marking
Table 4. Marking codes Type number
BTA316B-600B0
Marking codes
Assembly factory: E
BTA316B 600B0
PJExxxx xx
Assembly factory: N
BTA316B 600B0
PJNxxxx xx
BTA316-600B0
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 July 2021
© WeEn Semiconductors Co., Ltd. 2021. All rights reserved
2 / 13
WeEn Semiconductors
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 101 °C; Fig. 1; Fig. 2; Fig. 3
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;
state current
Fig 4; Fig 5
I2t
I2t for fusing
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms tp = 10 ms; sine-wave pulse
dIT/dt
rate of rise of on-state current
IG = 0.1 A
IGM
peak gate current
PGM
peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg
storage temperature
Tj
junction temperature
BTA316-600B0
3Q Hi-Com Triac
Min Max Unit
-
600 V
-
16
A
-
140 A
-
150 A
-
98
A2s
-
100 A/μs
-
2
A
-
5
W
-
0.5
W
-40
150 °C
-
125 °C
Fig. 1. RMS on-state current as a function of mounting
f = 50 Hz; Tmb = 101 °C
base temperature; maximum values
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA316-600B0
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 July 2021
© WeEn Semiconductors Co., Ltd. 2021. All rights reserved
3 / 13
WeEn Semiconductors
20
Ptot (W)
conduction form angle, factor
(degrees) a
30
2.816
15
60
1.967
90
1.570
α
120
1.329
180
1.110
10
BTA316-600B0
3Q Hi-Com Triac
003aab689
.