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BTA316B-600B0 Dataheets PDF



Part Number BTA316B-600B0
Manufacturers WeEn
Logo WeEn
Description 3Q Hi-Com Triac
Datasheet BTA316B-600B0 DatasheetBTA316B-600B0 Datasheet (PDF)

BTA316B-600B0 3Q Hi-Com Triac Rev.02 - 30 July 2021 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a TO263 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B0" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits • 3Q technology for improved noise immunity • High immunity to false turn-.

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BTA316B-600B0 3Q Hi-Com Triac Rev.02 - 30 July 2021 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a TO263 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B0" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits • 3Q technology for improved noise immunity • High immunity to false turn-on by dV/dt • High minimum IGT for guaranteed immunity to gate noise • High voltage capability • Surface mountable package • Least sensitive gate for highest noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only • Very high commutation capability with maximum false trigger immunity 3. Applications • Electronic thermostats (heating and cooling) • High power motor controls e.g. washing machines and vacuum cleaners • Rectifier-fed DC inductive loads e.g. DC motors and solenoids • Refrigeration and air conditioning compressors 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak on- state current Tj junction temperature Symbol Parameter Static characteristics Conditions full sine wave; Tmb ≤ 101 °C; Fig. 1; Fig. 2; Fig. 3 full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms Conditions IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 Min Typ Max Unit - - 600 V - - 16 A - - 140 A - - 150 A - - 125 °C Min Typ Max Unit 10 - 10 - 10 - 50 mA 50 mA 50 mA WeEn Semiconductors BTA316-600B0 3Q Hi-Com Triac IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dIcom/dt rate of change of commutating current VD = 12 V; Tj = 25 °C; Fig. 9 IT = 18 A; Tj = 25 °C; Fig. 10 VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM ); exponential waveform; gate open circuit VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/μs; (snubberless condition); gate open circuit VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A; dVcom/dt = 10 V/μs; (snubberless condition); gate open circuit VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A; dVcom/dt = 1 V/μs; (snubberless condition); gate open circuit - - 60 mA - 1.3 1.5 V 2500 - - V/μs 20 - - A/ms 30 - - A/ms 50 - - A/ms 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G mb T2 gate mounting base; main terminal 2 2 1 3 E TO-263 (D2PAK) N Graphic symbol T2 T1 G sym051 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Name BTA316B-600B0 TO263 BTA316B-600B0J Packing method Reel Small packing Package quantity version 800 TO263E (E) TO263N (N) Package issue date 26-May-2017 26-Sep-2016 7. Marking Table 4. Marking codes Type number BTA316B-600B0 Marking codes Assembly factory: E BTA316B 600B0 PJExxxx xx Assembly factory: N BTA316B 600B0 PJNxxxx xx BTA316-600B0 Product data sheet All information provided in this document is subject to legal disclaimers. 30 July 2021 © WeEn Semiconductors Co., Ltd. 2021. All rights reserved 2 / 13 WeEn Semiconductors 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 101 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms; state current Fig 4; Fig 5 I2t I2t for fusing full sine wave; Tj(init) = 25 °C; tp = 16.7 ms tp = 10 ms; sine-wave pulse dIT/dt rate of rise of on-state current IG = 0.1 A IGM peak gate current PGM peak gate power PG(AV) average gate power over any 20 ms period Tstg storage temperature Tj junction temperature BTA316-600B0 3Q Hi-Com Triac Min Max Unit - 600 V - 16 A - 140 A - 150 A - 98 A2s - 100 A/μs - 2 A - 5 W - 0.5 W -40 150 °C - 125 °C Fig. 1. RMS on-state current as a function of mounting f = 50 Hz; Tmb = 101 °C base temperature; maximum values Fig. 2. RMS on-state current as a function of surge duration; maximum values BTA316-600B0 Product data sheet All information provided in this document is subject to legal disclaimers. 30 July 2021 © WeEn Semiconductors Co., Ltd. 2021. All rights reserved 3 / 13 WeEn Semiconductors 20 Ptot (W) conduction form angle, factor (degrees) a 30 2.816 15 60 1.967 90 1.570 α 120 1.329 180 1.110 10 BTA316-600B0 3Q Hi-Com Triac 003aab689 .


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