BC875

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC875; BC879 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 22 1999 May 28 Philips Semiconductors Product specification NPN Darlington transistors FEATURES High DC current gain (min. 1000) High current (max. 1 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS Relay drivers. DESCRIPTION NPN Darlington transistor in a TO-92 (SOT54) plastic package. PNP complement: BC878. Fig.1 handbook, halfpage BC875; BC879 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 2 1 1 2 3 MAM307 3 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC875 BC879 VCES collector-emitter voltage BC875 BC879 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector VBE = 0 − − − − − − − −65 − −65 45 80 5 1 2 0.2 0.83 +150 150 +150 V V V A A A W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 60 100 V V MIN. MAX. UNIT 1999 May 28 2 Philips Semiconductors Product specification NPN Darlington transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj =...