BC876

SIEMENS PNP Silicon Darlington Transistors High current gain High collector current Low collector-emitter Saturation vottage Complementary types: BC 875, BC 877, BC 879 (NPN) 1 BC 876 . . . BC 880 0 l 0 0 Type BC876 BC 878 BC880 Marking -’ . Ordering Code C62702-C943 C62702-C942 C62702-C941 Pin Configuration 1 2 3 E C B Packagel) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation. Junction temperature Storage temperature range Thermal Resistance Junction - ambientz) Junction - case 3) TC Symbol Values BC 876 VCM vcrm 45 60 Unit BC 878 60 80 BC 880 80 100 V VEB0 IC 5 1 2 100 200 0.8 (1) 150 -65 . . . + 150 W % mA’ A ichl Ie IBM = 99 % 2) P l~( Ti Tstp RthJA RäX <156 s75 Klw 1) For detailed information sec chapter Package Outtines. 2) If transistors wftf-~ max. 4 mm lead fangth are fixad on PCBs with a min. 10 mm x 10 mm larga coppar area for the collector terminal, Rnu = 125 KAV and thus P IOIMX = 1 W at TA = 25 ‘C. 3) Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm. 387 BC 876 . . . BC 880 Electrical Characteristics at TA = 25 %, uhless otherwise specified. Parameter _ Symbol Values min. typ. DC characteristics IC Unit max. Collector-emitter breakdown voltage = 50 mA BC 876 BC 878 BC 880 Collector-base breakdown voltage Ic= 1oofl BC 876 BC 878 BC 880 Emitter-base breakdown voltage, IE = 100 fl Collector cutoff ...