BC878

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC878 PNP Darlington transistor Product specification Supersedes data of 1997 Apr 22 1999 May 31 Philips Semiconductors Product specification PNP Darlington transistor FEATURES High DC current gain (min. 1000) High current (max. 1 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS Relay drivers. DESCRIPTION PNP Darlington transistor in a TO-92 (SOT54) plastic package. NPN complements: BC875 and BC879. handbook, halfpage BC878 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 2 1 1 2 3 MAM306 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER CONDITIONS VALUE 150 UNIT K/W PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter VBE = 0 open collector − − − − − − − −65 − −65 MIN. MAX. −80 −60 −5 −1 −2 −200 0.83 +150 150 +150 V V V A A mA W °C °C °C UNIT thermal resistance from junction to ambient note 1 1999 May 31 2 Philips Semiconductors Product speci...