BC879

NPN Silicon Darlington Transistors BC 875 … BC 879 High current gain q Low collector-emitter saturation voltage q Complementary types: BC 876, BC 878 BC 880 (PNP) q 2 3 1 Type BC 875 BC 877 BC 879 Marking – Ordering Code C62702-C853 C62702-C854 C62702-C855 Pin Configuration 1 2 3 E C B Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 90 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - case3) 1) 2) Symbol BC 875 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 45 60 Values BC 877 60 80 5 1 2 100 200 0.8 (1) 150 Unit BC 879 80 100 A mA W ˚C V – 65 … + 150 Rth JA Rth JC ≤ 156 75 K/W ≤ For detailed information see chapter Package Outlines. If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. 3) 383 5.91 BC 875 … BC 879 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 50 mA BC 875 BC 877 BC 879 Collector-base breakdown voltage IC = 100 µA BC 875 BC 877 BC 879 Emitter-base breakdown voltage, IE = 100 µA Collector cutoff current VCE = 0.5 × VCEmax Collector cutoff current ...