SI2304

SI2304 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@ 10V, Ids@ 3.5A RDS(ON), Vgs@ 4.5V, Ids@ 2.8A 70m Ω 80mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions - D SOT-23 GS REF. A B C D E F Millimeter Min. Max. 2.80 3.00 2.30 2.50 1.20 1.40 0.30 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.80 2.00 0.90 1.1 0.10 0.20 0.35 0.70 0.92 0.98 0° 10° ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS 30 "20 Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg 3.5 2.8 16 1.25 1.25 0.80 - 55 to 150 Unit V A W _...