Power Transistors
2SB1493
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2255...
Power
Transistors
2SB1493
Silicon
PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2255
s Features
q Optimum for 60W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < –2.5V
20.0±0.3 19.0±0.3 15.0±0.2
4.0±0.1
15.0±0.5 13.0±0.5 10.5±0.5
Unit: mm
4.5±0.2 2.0±0.1
4.0±0.1
φ3.2±0.1
16.2±0.5 12.5 3.5 Solder Dip
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC
PC
–160 –140 –5 –12 –7 70 2.5
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V A A
W
˚C ˚C
2.0±0.2 1.1±0.1
1.4±0.3
5.45±0.3 10.9±0.5
0.6±0.2
123
1:Base 2:Collector 3:Emitter EIAJ:SC–65(a) TOP–3 Package(a)
Internal Connection
C
B
s Ele...
