AM4481P

Analog Power P-Channel 80-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology AM4481P PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) -80 126 @VGS= -10V 146 @VGS= -4.5V ID (A) 6.8 5.9 18 27 36 45 ABSOLUTE MAXIMUMRATINGS (TA = 25 oCUNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TA=25oC TA=70oC ID IDM -80 V ±20 6.8 6.3 A ±30 Continuous Source Current (Diode Conduction)a IS -2.5 A...