MJ10021
Darlington Power Transistor
NPN silicon power darlington transistors with Base-Emitter speedup diode are designe...
MJ10021
Darlington Power
Transistor
NPN silicon power darlington
transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications.
Features:
Continuous Collector Current - IC = 60A. Switching
regulators. Inverters. Solenoid and relay drivers. AC and DC Motor controls.
Dimensions Minimum Maximum
Pin 1. Base 2. Emitter Collector(Case)
Maximum Ratings
A
38.75
39.96
B
19.28
22.23
C 7.96 9.28
D
11.18
12.19
E
25.20
26.67
F 0.92 1.09
G 1.38 1.62
H
29.90
30.40
I
16.64
17.30
J 3.88 4.36
K
10.67
11.18
Dimensions : Millimetres
Characteristic
Symbol
MJ10021
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous -Peak
Base Current
Total Power Dissipation at TC = 25°C TC = 100°C
Derate above 25°C
Operating and Storage Junction Temperature Ran...
