AON3810

AON3810 20V Dual N-Channel MOSFET General Description The AON3810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Product Summary VDS (V) = 20V ID = 8.5A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) RDS(ON) < 39mΩ (VGS = 2.5V) RDS(ON) < 55mΩ (VGS = 1.8V) ESD Rating: 2000V HBM Top View DFN 3x3 Bottom View Top View S2 1 G2 2 S1 3 G1 4 8 7 6 5 D2 D2 G1 D1 D1 1.6KΩ Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 8...