ITCH24100B2

Innogration (Suzhou) Co., Ltd. Document Number: ITCH24100B2 Preliminary Datasheet V1.0 2300MHz-2400MHz, 100W, 28V High Power RF LDMOS FETs Description The ITCH24100B2 is a 100-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2300 to 2400 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH24100B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 900 mA, Pulse CW, Pulse Width=100 us, Duty cycle=20% . Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%) 2300 MHz 18.2 50.8 52.8 51.5 54.2 2350 MHz 18.3 50.6 52.8 51.4 54.6 2400 MHz 18.7 50.1 51.8 51.0 54.0 ITCH24100B2E Typical Single-Carrier W-CDMA Performance (On Test Fixture with device soldered): VDD=28Volts, IDQ = 900 mA, Pout= 41dBm Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input S...