ITCH22210B2

Innogration (Suzhou) Co., Ltd. Document Number: ITCH22210B2 Preliminary Datasheet V1.0 2110MHz-2170MHz, 210W, 28V High Power RF LDMOS FETs Description The ITCH22210B2 is a 210-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH22210B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% . Frequency Gp P-1dB P-3dB D@P-3 (MHz) (dB) (dBm) (dBm) (%) 2110  16.9 53.1 54.0 54.5 2140 16.9 52.8 53.7 54.2 2170 16.8 52.5 53.5 54.4 ITCH22210B2E Typical Single-Carrier W-CDMA Performance (On Test Fixture with device soldered): VDD=28Volts, IDQ = 780 mA, POUT= 47.5dBm Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 10.5 dB @ 0.01% ...