ITCH22180B2

Innogration (Suzhou) Co., Ltd. Document Number: ITCH22180B2 Preliminary Datasheet V1.0 2110MHz-2170MHz, 180W, 28V High Power RF LDMOS FETs Description The ITCH22180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH22180B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% . Frequency Gp (dB) P-1dB (dBm) ηD@P-1 (%) P-3dB (dBm) ηD@P-3 (%) 2110 MHz 17.8 52.5 51.8 53.6 55.5 2140 MHz 17.9 52.3 51.5 53.5 55.5 2170 MHz 17.9 52.0 51.2 53.2 55.5 ITCH22180B2E Features High Efficiency and Linear Gain Operations Integrated ESD Protection Internally Matched for Ease of Use Excellent thermal stability, low HCI drift Large Positive and Negativ...