ITCH22160B4E

Innogration (Suzhou) Co., Ltd. Document Number: ITCH22160B4 Preliminary Datasheet V1.0 2000MHz-2200MHz, 160W, 28V High Power RF LDMOS FETs Description The ITCH22160B4 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH22160B4 Typical Performance of Single Section (On Innogration fixture with device soldered): VDD =28 Volts, IDQ =600 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% . ITCH22160B4E Freq (MHz) Gmax (dB) P-1dB (dBm) P-3dB (dBm) D@P-3 (%) 2110 2140 2170 17.4 17.6 17.2 49.1 48.7 48.3 49.9 49.6 49.3 54.4 54.6 54.2 Typical Performance of Doherty Circuit (On Innogration fixture with device soldered): VDD =28 Volts, IDQMAIN =500 mA, VGPEAK=0.9V, Pulse CW, Pulse Width=20 us, Duty cycle=10% . Freq (MHz) Gmax (dB) P-1dB (dBm) P-3dB (d...